www.irf.com 1 irs2106(4)d(s)pbf high and low side driver packages description irs2106d/irs2108d/irs2109d/feature comparison the irs2106(4)d(s) are high voltage, high speed power mosfet an 1gbt drivers with independent high and low side referenced output channels. proprietary hvic and latch immune cmos technologies enable ruggedized monolithic construction. the logic input is compatible with standard cmos or lsttl output, down to 3.3v logic. the output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. the floating channel can be used to drive an n-channel power mosfet or 1gbt in the high side configuration which operates up to 600 volts. part input logic cross- conduction prevention logic dead-time ground pins ton/toff 2106 com 21064 hin/lin no none vss/com 515/500 2108 internal 540ns com 21084 ___ hin/lin yes programmable 0.54- 5us vss/com 220/220 2109 internal 540ns com 21094 ___ in/sd yes programmable 0.54- 5us vss/com 750/220 features ? floating channel designed for bootstrap operation fully operational to +600v tolerant to negative transient voltage ? dv/dt immune ? gate drive supply range from 10 to 20v ? undervoltage lockout for both channels ? 3.3v, 5v and 15v input logic compatible ? matched propagation delay for both channels ? logic and power ground +/- 5v offset. ? lower di/dt gate driver for better noise immunity ? outputs in phase with inputs ? integrated bootstrap diode irs2106 ( 4 ) d ( s ) pbf data sheet no. pd60241 preliminary datasheet 8-lead soic 8-lead pdip 14-lead soic 14-lead pdip
www.irf.com 2 irs2106(4)d(s)pbf absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to com. th e thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. recommended operating conditions the input/output logic timing diagram is shown in figure 1. for proper operation th e device should be used within the recommended conditions. the v s & v ss offset rating are tested with all supplies biased at 15v differential. symbol definition min. max. units v b high side floating supply absolute voltage v s +10 v s +20 v s high side floating supply offset voltage note 1 600 v ho high side floating output voltage v s v b v cc low side and logic fixed supply voltage 10 20 v lo low side output voltage 0 v cc v in logic input voltage v ss v ss + 5 v ss logic ground (irs21064d only) -5 5 v t a ambient temperature -40 125 c note 1: logic operational for v s of -5 to +600v. logic state held for v s of -5v to ? v bs. (please refer to the design tip dt97 -3 for more details). note 2: hin, lin are internally clamped with a 5.2v zener diode. symbol definition min. max. units v b high side floating supply voltage -0.3 620 v s high side floating supply offset voltage v b - 20 v b + 0.3 v ho high side floating output voltage v s - 0.3 v b + 0.3 v cc low side and logic fixed supply voltage -0.3 20 v ss logic ground (irs21064d only) v cc - 20 v cc + 0.3 v lo low side output voltage -0.3 v cc + 0.3 v in logic input voltage v ss -0.3 v cc + 0.3 v dv s /dt allowable offset supply voltage transient ? 50 v/ns (8 lead pdip) ? 1.0 (8 lead soic) ? 0.625 (14 lead pdip) ? 1.6 p d package power dissipation @ ta +25c (14 lead soic) ? 1.6 w (8 lead pdip) ? 125 (8 lead soic) ? 200 (14 lead pdip) ? 75 rth ja thermal resistance, junction to ambient (14 lead soic) ? 120 c/w t j junction temperature ? 150 t s storage temperature -50 150 t l lead temperature (soldering, 10 seconds) ? 300 c
www.irf.com 3 irs2106(4)d(s)pbf dynamic electrical characteristics v bias (v cc , v bs ) = 15v, v ss = com, c l = 1000 pf, t a = 25 c symbol definition min typ max units test conditions t on turn-on propagation delay ? 515 715 v s = 0v t off turn-off propagation delay ? 500 700 v s = 0v or 600v mt delay matching, hs & ls turn-on/off ? ? 30 t r turn-on rise time ? 150 220 v s = 0v t f turn-off fall time ? 50 80 nsec v s = 0v t fil minimum pulse input filter time ? 300 ? static electrical characteristics v bias (v cc , v bs ) = 15v, v ss = com and t a = 25 c unless otherwise specified. the v il, v ih and i in parameters are referenced to v ss /com and are applicable to th e respective input leads. the v o, i o and ron parameters are referenced to com and are applicable to the respective output leads: ho and lo. symbol definition min typ max units test conditions v inth+ positive input threshold voltage ? ? 2.2 v cc = 10v to 20v v inth- negative input threshold voltage 0.8 ? ? v cc = 10v to 20v v oh high level output voltage ? 0.8 1.4 i o = 20 ma v ol low level output voltage ? 0.3 0.6 v i o = 20 ma i lk offset supply leakage current ? ? 50 v b = v s = 600v i qbs quiescent v bs supply current ? 45 70 v in = 0v or 4v i qcc quiescent v cc supply current 500 1100 1700 v in = 0v or 4v i in+ logic ?1? input bias current ? 5 20 v in = 4v i in- logic ?0? input bias current ? ? 2 a v in = 0v v ccuv+ v bsuv+ v cc and v bs supply undervoltage positive going threshold 8.0 8.9 9.8 v ccuv- v bsuv- v cc and v bs supply undervoltage negative going threshold 7.4 8.2 9.0 v ccuvh v bsuvh v cc and v bs supply undervoltage hysteresis ? 0.7 ? v i o+ output high short circuit pulsed current 120 200 ? v o = 0v, pw 10 us i o- output low short circuit pul sed current 250 350 ? ma v o = 15v, pw 10 us rbs bootstrap resistance ? 200 ? ohm v cc = 15
www.irf.com 4 irs2106(4)d(s)pbf functional block diagrams uv detect pulse generator vss/com level shift pulse filter hin hv level shifter q vs ho vb s r r vss/com level shift uv detect delay lin vcc lo com irs2106d integrated bs diode
www.irf.com 5 irs2106(4)d(s)pbf lead definitions symbol description hin logic input for high side gate driver output (ho), in phase lin logic input for low side gate driver output (lo), in phase v ss logic ground (irs21064d only) v b high side floating supply ho high side gate drive output v s high side floating supply return v cc low side and logic fixed supply lo low side gate drive output com low side return lead assignments
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www.irf.com 8 irs2106(4)d(s)pbf ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 http://www.irf.com data and specifications subject to change wit hout notice. 10/25/2005
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